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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicongate-controlled devices are needed. * Off-State Voltages to 800 Volts * All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability * Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation * Gate Triggering Guaranteed in Three Modes (MAC223FP Series) or Four Modes (MAC223AFP Series)
MAC223FP Series MAC223AFP Series
ISOLATED TRIACs THYRISTORS 25 AMPERES RMS 200 thru 800 VOLTS
MT2 G
MT1
CASE 221C-02 STYLE 3
MAXIMUM RATINGS (TJ = 25 unless otherwise noted.)
Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC223-4FP, MAC223A4FP MAC223-6FP, MAC223A6FP MAC223-8FP, MAC223A8FP MAC223-10FP, MAC223A10FP On-State RMS Current (TC = +80C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = 80C, preceded and followed by rated current) Circuit Fusing (t = 8.3 ms) Peak Gate Power (t Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t 25 250 260 20 0.5 2 10 1500 -40 to +125 -40 to +150 8 Amps Amps A2s Watts Watt Amps Volts Volts C C in. lb. Value Unit Volts
p 2 s)
Average Gate Power (TC = +80C, t
p 2 s) Peak Gate Voltage (t p 2 s)
Peak Gate Current (t Storage Temperature Range Mounting Torque
p 8.3 ms) p 20%)
PGM PG(AV) IGM VGM V(ISO) TJ Tstg --
RMS Isolation Voltage (TA = 25C, Relative Humidity Operating Junction Temperature
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Symbol RJC RCS RJA Max 1.2 2.2 60 Unit C/W C/W C/W
Motorola Thyristor Device Data (c) Motorola, Inc. 1995
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MAC223FP Series MAC223AFP Series
ELECTRICAL CHARACTERISTICS (TC = 25C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Peak Blocking Current(1) (VD = Rated VDRM, Gate Open) Peak On-State Voltage (ITM = 35 A Peak, Pulse Width TJ = 25C TJ = 125C Symbol IDRM VTM IGT -- -- VGT -- -- 0.2 0.2 IH tgt dv/dt dv/dt(c) -- -- -- -- 1.1 1.3 0.4 0.4 10 1.5 40 5 2 2.5 -- -- 50 -- -- -- mA s V/s V/s 20 30 50 75 Volts Min -- -- -- Typ -- -- 1.4 Max 10 2 1.85 Unit A mA Volts mA
p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+); MT2(-), G(-); MT(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY (VD = Rated VDRM, TJ = 125C, RL = 10 k) MT(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) "A" SUFFIX ONLY Holding Current (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80C)
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage.
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
PD(AV) , AVERAGE POWER DISSIPATION (WATTS)
125 115 105 95 85 75
40
30
20
10
0 0 5 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS)
0
5
10
15
20
25
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
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Motorola Thyristor Device Data
MAC223FP Series MAC223AFP Series
TYPICAL CHARACTERISTICS
NORMALIZED GATE CURRENT
NORMALIZED GATE VOLTAGE
3 2 1 0.5 0.3 0.2 0.1 -60 -40 -20 0 20 40
3 2 1 0.5 0.3 0.2 0.1 -60 VD = 12 V RL = 100
VD = 12 V RL = 100
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Gate Trigger Current
i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS)
Figure 4. Gate Trigger Voltage
NORMALIZED HOLD CURRENT
200 100 50 10 5 1 0.5 0.1 0 1 2 3 4 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ = 25C
2 1 0.5 0.3 0.2 0.1 -60 -40 -20
ITM = 200 mA GATE OPEN
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)
120
140
Figure 5. Hold Current
Figure 6. Typical On-State Characteristics
Motorola Thyristor Device Data
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MAC223FP Series MAC223AFP Series
PACKAGE DIMENSIONS
-B- P
-T- F N E C S
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28
H -Y-
Q
123
A
STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE
K Z L G D
3 PL
J R
0.25 (0.010)
M
B
M
Y
CASE 221C-02
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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*MAC223FP/D*
Motorola Thyristor Device Data
MAC223FP/D

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